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Volumn 39, Issue 5, 1989, Pages 3317-3329

Electronic structures and doping of InN, InxGa1-xN, and InxAl1-xN

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EID: 35949011911     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.39.3317     Document Type: Article
Times cited : (369)

References (26)
  • 4
    • 84926859163 scopus 로고    scopus 로고
    • and references therein.
  • 6
    • 84926859162 scopus 로고    scopus 로고
    • See, for example, W. A. Harrison, Solid State Physics (Dover, New York, 1971), p. 324.
  • 13
    • 84926874156 scopus 로고
    • The virtual-crystal approximation can be given a modicum of justification because the Onodera-Toyozawa ratios for InGa1-xx N [, ], namely the ratios of In-Ga diagonal on-site matrix-element differences to valence- (conduction-) band width are 0.22 (0.98) and 0.04 (0.08) for s and p orbitals, respectively. These values place InGa1-xx As in the ``amalgamated'' limit for the valence band and marginally for the conduction band. The values are somewhat higher than the corresponding values for AlGax1-x As, 0.07 (0.16) and 0.005 (0.008), a material for which the virtual-crystal approximation is known to be a good model for the electronic structure;
    • (1968) Y. Onodera and Y. Toyozawa, J. Phys. Soc. Jpn. , vol.24 , pp. 341
  • 14
    • 84926851085 scopus 로고
    • however, the theory agrees with the band-gap data of Osamura et al. [, ] to within 0.3 eV. (These data were taken at 77 K, while our theory describes the material at 4 K.) Thus we conclude that this approximation will provide an adequate ``zeroth-order'' description of all the InN alloys. Similar values for InAl1-xx N are 0.94 (0.10) and 0.40 (1.66) for the valence (conduction) band for s and p states, respectively. These parameters vary with composition and are in the ``amalgamated'' regime for Al-rich alloys.
    • (1975) K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. , vol.46 , pp. 3432
  • 17
    • 84926793686 scopus 로고    scopus 로고
    • The conduction-band minima occur at the symmetry points in the Brillouin zone: Γ = (0,0,0), H = ( 2 π / a ) ( 1/ sqrt 3 , case 1 over 3 , c/2a ), L = (2 π / a ) (1/ sqrt 3 , 0,c/2a ), K= (2 π / a ) (1/ sqrt 3 , case 1 over 3 , 0), M = ( 2 π / a ) (1/ sqrt 3 , 0,0), and A = (2 π / a ) (0,0,c/2a ).
  • 20
    • 84926793685 scopus 로고    scopus 로고
    • A substitutional defect in a wurtzite material has two spin-degenerate s-like ( A1) states, two spin-degenerate pz-like states ( A1), and four spin-degenerate px-like and py-like states (E2). We approximate the ratio between the repeat distance in the z axis c and the lattice constant in the x - y plane a to be c/a = ( case 8 over 3 )1/2. In this approximation the small splitting between the p-like A1 and E2 states vanishes.


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