Structure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopy

Physical Review Letters

Volumn 60, Issue 21, 1988, Pages 2176-2179

  Pashley, M D ^a   Haberern, K W ^a   Friday, W ^a   Woodall, J M ^b   Kirchner, P D ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35949011476     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.60.2176     Document Type: Article

References (15)

1. Summary Abstract: A RHEED/ARPES/CORE level spectroscopic evaluation of the structure of MBE-grown GaAs(001)-2×4 surfaces
2. Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces
3. High-resolution electron-energy-loss spectroscopy studies of GaAs (100) surfaces
4. The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction
5. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer