메뉴 건너뛰기




Volumn 46, Issue 7, 1992, Pages 3948-3952

Resonant tunneling in an AlxGa1-xAs/GaAs quantum dot as a function of magnetic field

Author keywords

[No Author keywords available]

Indexed keywords


EID: 35949008109     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.46.3948     Document Type: Article
Times cited : (45)

References (32)
  • 32
    • 84927872810 scopus 로고    scopus 로고
    • The obtained values hbar ω0 and dG differ slightly from a previous estimation in earlier work [M. Tewordt et al., in Proceedings of the International Symposium on Nanostructures and Meso- scopic Systems, Santa Fe, New Mexico 1991 (Ref. 10), where hbar ω0= 28 meV and dG= 20 nm], because in the present work we have included in the factor eta the spacer layer ds of the collector contact.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.