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3
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84931554196
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Metallic Superlattices: Artificially Structured Materials, edited by T. Shinjo and T. Takada, Studies in Physical and Theoretical Chemistry Vol. 49 (Elsevier, Amsterdam, 1987);
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-
-
-
6
-
-
33750860386
-
-
(1988)
Phys. Rev. Lett.
, vol.61
, pp. 2472
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-
Baibich, M.N.1
Broto, J.M.2
Fert, A.3
Nguyen Van Dau, F.4
Pétroff, F.5
Etienne, P.6
Creuzet, G.7
Friederich, A.8
Chazelas, J.9
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14
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0001341699
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-
(1990)
J. Appl. Phys.
, vol.67
, pp. 5908
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Barthélémy, A.1
Fert, A.2
Baibich, M.N.3
Hadjoudj, S.4
Pétroff, F.5
Etienne, P.6
Cabanel, R.7
Lequien, S.8
Nguyen Van Dau, F.9
Creuzet, G.10
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22
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0001259640
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Oscillatory interlayer exchange and magnetoresistance in Fe/Cu multilayers
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(1991)
Physical Review B
, vol.44
, pp. 5355
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Pétroff, F.1
Barthélémy, A.2
Mosca, D.H.3
Lottis, D.K.4
Fert, A.5
Schroeder, P.A.6
Pratt, W.P.7
Loloee, R.8
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84931554191
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It should be noted that the magnetoresistance (Δ ρ / ρ ), as defined, is positive when refers to what is usually called a negative MR. Only cases with (Δ ρ / ρ ) >= 0 are considered in this contribution. Situations where (Δ ρ / ρ ) < 0 (ordinary magnetoresistance) may occur in the model when the relaxation times τ i σ for spin sigma take different values in different layers i. Such cases are not discussed here.
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84931554190
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For the sake of simplicity the formulas for the reflection and transmission coefficients are written exclusively for the case in which the effective masses are the same on both sides of the interface, i.e., mi σ =mj σ .
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25
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84931554189
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It should be noted that the function F tildei σ (u) has an analytic form and can be written as a closed expression. The expression takes a somewhat simpler form for long mean free paths. It, however, contains in all instances the transmission and reflection coefficients and, when inserted in Eq. (9), yields expressions too complicated to be evaluated analytically. For the sake of brevity the expression is not included here.
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84931554188
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The observed maxima in the magnetoresistance shown in Fig. 9 are caused by the fact that most of the effect is caused, as discussed below, by a channeling effect—within the spacer layer—of the spin for which S=1. As ds-> 0 the contribution of the ``channel'' to the current becomes smaller, the electrons of both spins are subject in all configurations to the strong diffuse scattering of the free surfaces, and the magnetoresistance decreases with decreasing ds.
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84931554195
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It should be noted that the channeling effect, per se, does not necessarily lead to a large magnetoresistance, as can be seen from the case shown in Fig. 6 [( Δ ρ / ρ ) =0 for P=SM =Sm=1]. The large magnetoresistance appears when, in the parallel arrangement, there is channeling for only one spin and diffuse interface scattering for the other one. In that case, in the antiparallel arrangement, both spins partake in the diffuse scattering, and the long electron trajectories (and the channeling) are lost.
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84931554194
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The particular result (Δ ρ / ρ )=0 is valid for P=SM=Sm=1 and for any combination of geometric and intrinsic metal parameters as long as τ i σ = τsigma, i.e., the relaxation times for each spin are the same in all layers of the system.
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