Photoluminescence investigation of defects created by electron bombardment of 4H-SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 313-318

  Steeds, J W ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Electron irradiation; Photoluminescence microscopy; Point defects

Indexed keywords

ELECTRON IRRADIATION; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BOMBARDMENTS; ELECTRON DOSE; NEW RESULTS; P-DOPING; PHOTOLUMINESCENCE INVESTIGATION; PHOTOLUMINESCENCE MICROSCOPY; PHOTOLUMINESCENCE SPECTRUM; ZERO PHONON LINES;

ELECTRONS;

EID: 35748946532     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.313     Document Type: Conference Paper

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