Electrical structures and optical properties of doped earth element (Y, La) in γ-Si3N4

Wuli Xuebao/Acta Physica Sinica

Volumn 56, Issue 10, 2007, Pages 5996-6002

  Ding, Ying Chun ^a   Xiang, An Ping ^a   Xu, Ming ^a,b   Zhu, Wen Jun ^b,c  

^a CHENGDU UNIVERSITY OF INFORMATION TECHNOLOGY   (China)

^b SICHUAN NORMAL UNIVERSITY   (China)

^c RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

Si3N4; Doping; Electrical structure; Optical property

Indexed keywords

EID: 35748933490     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)