Programmed defects study on masks for 45nm immersion lithography using the novel AIMS™45- 193i

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6533, Issue , 2007, Pages

  Scherübl, Thomas ^b   Dürr, Arndt C ^a   Böhm, Klaus ^b   Birkner, Robert ^b   Richter, Rigo ^b   Strößner, Ulrich ^b  

^a Advanced Mask Technology Center GmbH and Co KG   (Germany)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMMERSION LITHOGRAPHY; PROGRAMMED DEFECTS; TOOL STABILITY; VECTOR EFFECTS;

DEFECTS; LIGHT POLARIZATION; LIGHTING; PHASE SHIFT; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY;

MASKS;

EID: 35648934450     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.736530     Document Type: Conference Paper

References (4)

1. TM: Trademark of Carl Zeiss
2. R. A. Budd et al. Development and Application of a new tool for lithographic mask evaluation, the stepper equivalent Aerial Image Measurement System, AIMS. IBM J. Res. Develop. Vol. 41 No. 1,2 January / March 1997
3. W. Conley et al. 45nm imaging capability of various PSM technologies using polarization. Proceedings of SPIE Vol. 6152 2006
4. A. Zibold et al. First results for hyper NA scanner emulation from AIMS™45 - 193i