Dielectric and ageing behaviour of strontium barium niobate with barium strontium titanate additives

Journal of Physics D: Applied Physics

Volumn 40, Issue 21, 2007, Pages 6797-6802

  Ke, Shanming ^a,b   Huang, Haitao ^b   Fan, Huiqing ^a   Chan, H L W ^b   Zhou, L M ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; AGING OF MATERIALS; CURIE TEMPERATURE; DIELECTRIC LOSSES; GRAIN GROWTH; PERMITTIVITY; STRONTIUM ALLOYS;

AGEING BEHAVIOR; DIELECTRIC AGEING; STRONTIUM BARIUM NIOBATE;

CERAMIC MATERIALS;

EID: 35548965669     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/21/046     Document Type: Article

References (19)

1. Lenzo P V, Spencer E G and Ballman A A 1967 Appl. Phys. Lett. 11 191
2. Bhalla A S, Guo R, Burns G, Dacol F and Neurgaonkar R R 1987 Phys. Rev. B 36 2030
3. Lee H Y and Freer R 1997 J. Appl. Phys. 81 376
4. Su B and Button T W 2004 J. Appl. Phys. 95 1382
5. Fan H Q, Zhang L T, Zhang L Y and Yao X 2000 J. Phys.: Condens. Matter. 12 4381
6. Ren X B 2004 Nature Mater. 3 91
7. Zhang L X and Ren X B 2005 Phys. Rev. B 71 174108
8. Pérez J, Amorín H, M'Peko J C, Portelles J, Pérez J A and Guerrero F 2006 Mater. Sci. Eng. B 126 22
9. Huang H, Zhou L M, Guo J, Hng H H, Oh J T and Hing P 2003 Appl. Phys. Lett. 83 3692
10. Lee H Y and Freer R 1998 J. Mater. Sci. 33 1703
11. Burns G and Dacol F H 1990 Ferroelectrics 104 25
12. Uchino K and Nomura S 1982 Ferroelectr. Lett. Sect. 44 55
13. Fan H Q, Zhang L Y and Yao X 1998 J. Mater. Sci. 33 895
14. Viehland D, Jang S J, Wutting M and Cross L E 1990 J. Appl. Phys. 68 2916
15. Bhalla A S, Guo R, Cross L E, Burns G, Dacol F and Neurgaonkar R R 1992 J. Appl. Phys. 71 5591
16. Uchino K 2000 Ferroelectric Device (New York: Dekker)
17. Chao L K, Colla E V, Weissman M B and Viehland D 2005 Phys. Rev. B 72 134105
18. Hall D A and Ben-Omran M M 1998 J. Phys.: Condens. Mater. 10 9129
19. Li W, Chen K, Yao Y Y, Zhu J S and Wang Y N 2004 Appl. Phys. Lett. 85 4717