Effect of isovalent ba-site substitutions on the properties of (Ba 1-x-yMyYx)TiO3 (M = Ca, Sr, Pb) PTCR Ceramics

Inorganic Materials

Volumn 39, Issue 2, 2003, Pages 133-138

  Belous, A G ^a   V'yunov, O I ^a   Kovalenko, L L ^a   Buscaglia, V ^b   Viviani, M ^b   Nanni, P ^c  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b CNR   (Italy)

^c UNIVERSITY OF GENOA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM DERIVATIVE; CALCIUM DERIVATIVE; LEAD; METAL COMPLEX; STRONTIUM; TITANIUM DIOXIDE;

ARTICLE; CALCULATION; CERAMICS; CHEMICAL REACTION; PARTICLE SIZE; PHASE TRANSITION; REACTION ANALYSIS; SUBSTITUTION REACTION; TEMPERATURE SENSITIVITY; THERMODYNAMICS;

EID: 3543133167     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022142528744     Document Type: Article

References (16)

1. Prokopalo, O.I., Gol'tsov, Yu.I., Filip'ev, V.S., et al., Classification of Modification Additions to Barium Titanate, Izv. Akad. Nauk SSSR, Ser. Fiz., 1969, vol. 33, no. 7, pp. 1157-1160.
2. Belous, A.G., V'yunov, O.I., Khomenko, B.S., and Yanchevskii, O.Z., Microstructure and Semiconducting Properties of Barium Titanate Containing Heterovalent Substituents on the Titanium Site, Neorg. Mater., 1998, vol. 34, no. 6, pp. 725-729 [Inorg. Mater. (Engl. Transl.), vol. 34, no. 6, pp. 597-601].
3. Belous, A.G., V'yunov, O.I., Khomenko, B.S., and Yanchevskii, O.Z., Microstructure and Semiconducting Properties of Barium Titanate Containing Heterovalent Substituents on the Titanium Site, Neorg. Mater., 1998, vol. 34, no. 6, pp. 725-729 [Inorg. Mater. (Engl. Transl.), vol. 34, no. 6, pp. 597-601].
4. 3, Mater. Sci Eng., B, 1988, vol. 1, pp. 193-201.
5. Koschek, G. and Kubalek, E., Grain-Boundary Characteristics and Their Influence on the Electrical Resistance of Barium Titanate Ceramics, J. Am. Ceram. Soc., 1985, vol. 68, no. 11, pp. 582-586.
6. 3 Ferroelectric Semiconductors, Ukr. Khim. Zh. (Ukr. Ed.), 1998, vol. 64, no. 11, pp. 3-7.
7. Kuwabara, M. and Kumamoto, K., PTCR Characteristics in Barium Titanate Ceramics with Curie Points between 60 and 360°C, J. Am. Ceram. Soc., 1983, vol. 66, no. 11, pp. 214-215.
8. 3 for PTC Thermistors, Silic. Ind., 1994, vol. 49, no. 1/2, pp. 47-52.
9. Venevtsev, Yu.N., Politova, E.D., and Ivanov, S.A., Segneto- i antisegnetoelektriki semeistva titanata bariya (Ferro- and Antiferroelectrics of the Barium Titanate Family), Moscow: Khimiya, 1985.
10. 3, Key Eng. Mater., 1997, vols. 132-136, part 1, pp. 1313-1316.
11. Kornienko, S.M., Bykov, I.P., Bykov, M.P., et al., Impurity Centers in Rare-Earth-Doped Barium Titanate Ceramics, Fiz. Tverd. Tela (S.-Peterburg), 1999, vol. 41, no. 10, p. 1838.
12. Poluprovodniki na osnove titanata bariya (Barium Titanate Semiconductors), Okazaki, M., Ed., Moscow: Energoizdat, 1982, pp. 33-37 (translated from Japanese).
13. Becker, R., Uber der aufbau binarer Ligierungen, Z. Metallkd., 1987, vol. 29, no. 8, pp. 245-250.
14. Urusov, V.S., Teoriya izomorfnoi smesimosti (Theory of Isomorphous Miscibility), Moscow: Nauka.
15. Glinchuk, M.D., Bykov, I.P., Kornienko, S.M., et al., Influence of Impurities on the Properties of Rare-Earth-Doped Barium-Titanate Ceramics, J. Mater. Chem., 2000, vol. 10, no. 4, pp. 941-947.
16. Nagao, F., Jpn. Patent 47-41153, Byull. Izobret., 1972, no. 10.