Nonequilibrium magnetic polarization and spin currents controlled by gate voltage in a ferromagnetic single-electron transistor

Journal of Superconductivity and Novel Magnetism

Volumn 16, Issue 1, 2003, Pages 225-228

  Weymann, I ^a   Barnas J ^a,b   Martinek, J ^b,c,d  

^a ADAM MICKIEWICZ UNIVERSITY   (Poland)

^b INSTITUTE OF MOLECULAR PHYSICS   (Poland)

^c UNIVERSITY OF KARLSRUHE   (Germany)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Single electron transistor; Spin and charge accumulation; Spin polarized transport

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS;

SINGLE-ELECTRON TRANSISTORS; SPIN AND CHARGE ACCUMULATION; SPIN-POLARIZED TRANSPORT;

ELECTRON TRANSITIONS;

EID: 3543105557     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: None     Document Type: Article

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