Low divergence-angle, 808 nm, GaAlAs/GaAs, laser diode using asymmetric-cladding structure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5365, Issue , 2004, Pages 142-147

  Xu, Z ^a   Gao, W ^a   Siskavich, B ^a   Nelson, A ^a   Cheng, L ^a   Luo, K ^a   Kim, H S ^a   Wang, Z ^a   Chin, A K ^a  

^a Axcel Photonics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); DEGRADATION; EPITAXIAL GROWTH; LASER BEAMS; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

BEAM DIVERGENCE; LASING MODE INDEX; RIDGE WAVEGUIDE (RW) LASERS;

QUANTUM WELL LASERS;

EID: 3543078632     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528329     Document Type: Conference Paper

References (8)

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