Impact of thin film thermophysical properties on thermal management of wide bandgap solid-state transistors

International Journal of Thermophysics

Volumn 25, Issue 2, 2004, Pages 409-422

  Smith, A N ^a   Calame, J P ^b  

^a UNITED STATES NAVAL ACADEMY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Gallium nitride; Silicon carbide; Thermal management; Thin film thermal conductivity; Wide bandgap

Indexed keywords

GAIN CONTROL; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE APPLICATIONS; PHONONS; POWER AMPLIFIERS; RELIABILITY; SILICON CARBIDE; SPECIFIC HEAT; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; TRANSISTORS;

LATTICE TEMPERATURE; THERMAL MANAGEMENT; THIN FILMS THERMAL CONDUCTIVITY; WIDE BANDGAPS;

THIN FILMS;

EID: 3543071259     PISSN: 0195928X     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:IJOT.0000028478.11341.89     Document Type: Conference Paper

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