Epitaxial orientation and planar hall effect for MnAs films grown on GaAs(001)

Journal of Superconductivity and Novel Magnetism

Volumn 16, Issue 2, 2003, Pages 261-265

  Friedland, K J ^a   Kastner M ^a   Daweritz L ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Electronic transport; Ferromagnetic materials

Indexed keywords

ANISOTROPY; CRYSTALS; HYSTERESIS; MAGNETIC FIELDS; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

ANISOTROPIC MAGNETORESISTANCE (AMR); ELECTRONIC TRANSPORT; HYBRID STRUCTURES; PLANAR HALL EFFECTS;

FERROMAGNETIC MATERIALS;

EID: 3543055178     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: None     Document Type: Article

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