2.2 GHz All-n-p-n Second-Generation Controlled Conveyor in Pseudoclass AB Using 0.8-μm BiCMOS Technology

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 51, Issue 7, 2004, Pages 369-373

  Seguin, Fabrice ^a   Godara, Balwant ^b   Alicalapa, Frederic ^b   Fabre, Alain ^c  

^a ECOLE DES MINES DE NANTES   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

^c Ecole Nationale Superieure d'Electronique Informatique et Radiocommunications de Bordeaux   (France)

Author keywords

BiCMOS; current follower; intrinsic impedance; pseudoclass AB; second generation controlled current conveyor (CCCII); silicon (Si); voltage follower

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HARMONIC DISTORTION; MOSFET DEVICES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

BICMOS TECHNOLOGY; CURRENT FOLLOWER; INTRINSIC IMPEDANCE; SECOND GENERATION CONTROLLED CURRENT CONVEYOR; VOLTAGE FOLLOWER;

INTEGRATED CIRCUIT LAYOUT;

EID: 3543025727     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2004.831393     Document Type: Article

References (11)

1. K.C. Smith et al., “A second generation current conveyor, and its applications,” IEEE Trans. Circuits Theory, vol. 17, pp. 132-134, Feb. 1970.
2. C. Toumazou et al., Analog IC Design: The Current Mode Approach, London: Peter Peregrinus, 1990.
3. A. Fabre et al., “Phase compensation of ideal inductances based second-generation current conveyors,” Analog Integr. Circuits Signal Processing, vol. 24, pp. 153-162, 2000.
4. P.A. Martinez et al., “Wien type oscillator using CCCII+,” Analog Integr. Circuits Signal Processing, vol. 7, no. 2, pp. 139-149, 1995.
5. A. Fabre et al., “High-frequency, high-Q BiCMOS current mode bandpass filter, and mobile communications applications,” IEEE J. Solid-State Circuits, vol. 33, no. 4, pp. 614-625, 1998.
6. F. You et al., “Low-voltage class AB buffers with quiescent current control,” in IEEE J. Solid-State Circuits, vol. 33, 1998, pp. 915-919.
7. F. Seguin et al., “New second generation current conveyor with reduced parasitic resistance and bandpass filter application,” in IEEE Trans. Circuits Syst. I, vol. 48, June 2001, pp. 781-785.
8. 0.8-μm BiCMOS Process Parameters, 1998. AMS Austria Mikro System International, schloB prennstätten, A-8141 Unterprenstätten, Austria.
9. F. Seguin et al., “2-GHz controlled current conveyor in standard 0.8-μm BiCMOS technology,” Electron. Lett., vol. 37, no. 6, pp. 329-330, 2001.
10. A. Fabre, “Dual translinear voltage/current convertor,” Electron. Lett., vol. 19, no. 24, pp. 1030-1031, 1983.
11. J.L. Carbonero, “Développement des méthodes de mesures en hyperfréquences sur tranches de Silicium et application à la caractérization des technologies CMOS et BiCMOS sub-microniques,” Thèse de doctorat, INPG, Grenoble, France, Apr. 1996. in French.