Nonuniform impurity and electric-field distributions in high-resistivity Si〈W,Au〉, Bi12GeO20, and CdS crystals

Inorganic Materials

Volumn 39, Issue 3, 2003, Pages 203-214

  Skorikov, V M ^a   Dudkina, T D ^a   Chmyrev, V I ^a   Zuev, V V ^b   Kiryukhin, A D ^b  

^a KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; GERMANIUM; GOLD; SILICON; TUNGSTEN;

ARTICLE; CRYSTAL; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; EVAPORATION; LOW TEMPERATURE; MATHEMATICAL ANALYSIS; ROOM TEMPERATURE; SEMICONDUCTOR; VACUUM;

EID: 3543007177     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022623803691     Document Type: Article

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