Cathodoluminescence of Cd4SiS6, Cd4SiSe6, and Si-doped CdS, CdSe, and CdTe crystals

Inorganic Materials

Volumn 37, Issue 5, 2001, Pages 445-448

  Odin, I N ^a   Chukichev, M V ^a   Ivanov, V A ^a   Rubina, M E ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; SELENIUM; SILICON; SILICONE; TELLURIUM; ZINC SULFIDE;

ARTICLE; CRYSTAL; DOPING; FILM; LUMINESCENCE; MEASUREMENT; PHOTOSENSITIVITY; SPECTROSCOPY; VAPOR;

EID: 3542991403     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1017560313477     Document Type: Article

References (8)

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4. 6, Zh. Neorg. Khim., 1991, vol. 35, no. 11, pp. 2937-2943.
5. Odin, I.N. and Ivanov, V.A., Liquidus Surface in the Cd-Si-Te System, Zh. Neorg. Khim., 1991, vol. 35, no. 7, pp. 1837-1841.
6. Odin, I.N., Chukichev, M.V., and Galiulin, E.A., Preparation and Luminescent Properties of CdX〈Ge〉 and CdX〈Sn〉 (X = S, Se) Crystals, Neorg. Mater., 1999, vol.35, no. 11, pp. 1304-1306
7. [Inorg. Mater. (Engl. Transl.), vol. 35, no. 11, pp. 1115-1117].
8. Gavrilenko, V.I., Grekhov, A.M., Korbutyak, D.V., et al., Opticheskie svoistra poluprovodnikov (Optical Properties of Semiconductors), Kiev: Naukova Dumka, 1987.