40 GHz bandwidth and 64 GHz resonance frequency in injection-locked 1.55 μm VCSELs

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 5, 2007, Pages 1200-1208

  Chrostowski, Lukas ^a,b   Faraji, Behnam ^a,b   Hofmann, Werner ^a,c   Amann, Markus Christian ^a,c   Wieczorek, Sebastian ^d   Chow, Weng W ^e,f  

^a IEEE   (Canada)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^c WALTER SCHOTTKY INSTITUT   (Germany)

^d UNIVERSITY OF EXETER   (United Kingdom)

^e SANDIA NATIONAL LABORATORIES   (United States)

^f TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Direct modulation; Frequency response; Optical injection locking; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

DIRECT MODULATION; LASER RESONANCE; OPTICAL INJECTION LOCKING; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS);

BANDWIDTH; FREQUENCY RESPONSE; INJECTION LASERS; LASER RESONATORS; NATURAL FREQUENCIES; PHASE MODULATION;

SURFACE EMITTING LASERS;

EID: 35349008088     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.904417     Document Type: Conference Paper

References (32)

1. D. Kucharski, Y. Kwark, D. Guckenberger, D. Kuchta, K. Kornegay, M. Tan, C. K. Lynn, and A. Tandon, "A 20 Gb/s CMOS VCSEL driver with pre-emphasis and regulated output impedance in 0.13um CMOS," in Proc. IEEE Int. Solid-State Circuits Conf (ISSCC), 2005, p. 222.
2. K. Lear, M. Ochiai, V. Hietala, H. Hou, B. Hammons, J. Banas, and J. Nevers. (1997). High-speed vertical cavity surface emitting lasers. Dig. IEEE/LEOS Summer Topical Meetings [Online], pp. 53-54. Available: http://dx.doi.org/10.1109/LEOSST.1997.619101.
3. M. Ortsiefer, R. Shau, F. Mederer, R. Michalzik, J. Rosskopf, G. Bohm, F. Kohler, C. Lauer, M. Maute, and M.-C. Amann, "High-speed modulation up to 10 Gbit/s with 1.55 μm wavelength InGaAlAs VCSELs," Inst. Electr. Eng. Electron. Lett., vol. 38, no. 20, pp. 1180-1181, 2002.
4. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M. C. Amann, "10-Gb/s data transmission using BCB passivated 1.55 μm InGaAlAs-InP VCSELs," IEEE Photon. Technol. Lett., vol. 18, no. 2, pp. 424-426, Jan. 2006.
5. N. Suzuki, H. Hatakeyama, K. Fukatsu, T. Anan, K. Yashiki, and M. Tsuji, "25-Gbps operation of 1.1 μm-range InGaAs VCSELs for high-speed optical interconnections," in Proc. Opt. Fiber Commun. Conf., 2006, p. 3.
6. S. Weisser, E. C. Larkins, K. Czotscher, W. Benz, J. Daleiden, I. Esquivias, J. Fleissner, J. D. Ralston, B. Romero, R. E. Sah, A. Schonfelder, and J. Rosenzweig, "Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In0.35Ga0.65As-GaAs multiple-quantum, well lasers," IEEE Photon. Technol. Lett., vol. 8, no. 5, pp. 608-610, May 1996.
7. K. Nakahara, T. Tsuchiya, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, M. Aoki, and M. Mukaikubo, "High extinction ratio operation at 40-Gb/s direct modulation in 1.3 μm InGaAlAs-MQW RWG DFB lasers," in Proc. Opt. Fiber Commun. Conf., 2006, p. 3.
8. J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, "Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking," IEEE Photon. Technol. Lett., vol. 9, no. 10, pp. 1325-1327, Oct. 1997.
9. X. J. Meng, C. Tai, and M. C. Wu, "Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection," Inst. Electr. Eng. Electron. Lett., vol. 34, no. 2.1, pp. 2031-2032, 1998.
10. L. Chrostowski, X. Zhou, and C. J. Chang-Hasnain, "Microwave performance of optically injection-locked VCSELs," IEEE Trans. Microw. Theory Tech., vol. 54, no. 2, pp. 788-796, Feb. 2006.
11. E. Lau, H.-K. Sung, and M. Wu, "Ultra-high, 72 GHz resonance frequency and 44 GHz bandwidth of injection-locked 1.55 μm DFB lasers," in Proc. Opt. Fiber Commun. Conf., 2006, p. 3.
12. L. Chrostowski, X. Zhao, and C. J. Chang-Hasnain, "Very high resonance frequency (>40 GHz) optical, injection-locked 1.55 μm VCSELs," in Proc. Microw. Photon. Conf., 2004, pp. 255-258.
13. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, Y. Liu, and M. C. Amann, "High, speed (>11 GHz) modulation of BCB-passivated 1.55 μm InGaAlAs-InP VCSELs," Electron. Lett., vol. 42, no. 17, pp. 976-977, 2006.
14. S. Wieczorek, W. Chow, L. Chrostowski, and C. J. Chang-Hasnain. (2006, Jun.). Improved semiconductor-laser dynamics from induced population pulsation. IEEE J. Quantum Electron. [Online] vol. 42, no. 6, pp. 552-562. Available: http://dx.doi.org/10.1109/JQE.2006.874753.
15. A. Murakami, K. Kawashima, and K. Atsuki, "Cavity resonance shift and bandwidth enhancement in semiconductor lasers with strong light injection," IEEE J. Quantum Electron., vol. 39, no. 10, pp. 1196-1204, Oct. 2003.
16. X. Zhao, L. Chrostowski, and C. J. Chang-Hasnain, "Extinction ratio of injection-locked VCSELs," in Proc. Lasers Electro-Opt Soc. Conf., vol. 1, Nov. 8-9 2004, pp. 244-245.
17. X. Zhao, C. J. Chang-Hasnain, W. Hofmann, and M.-C. Amann, "Modulation efficiency enhancement of 1.55-μm injection-locked VCSELs," in Proc. IEEE Int. Semicond. Laser Conf., Sep. 2006, pp. 125-126.
18. R. Lang and K. Kobayashi, "External optical feedback effects on semi-conductor injection laser properties," IEEE J. Quantum Electron., vol. 16, no. 3, pp. 347-355, Mar. 1980.
19. N. Schunk and K. Petermann, "Noise analysis of injection-locked semi-conductor injection lasers," IEEE J. Quantum Electron., vol. QE-22, no. 5, pp. 642-650, May 1986.
20. R. Lang, "Injection locking properties of a semiconductor laser," IEEE J. Quantum Electron., vol. QE-18, no. 6, pp. 976-983, Jun. 1982.
21. I. Petitbon, P. Gallion, G. Debarge, and C. Chabran, "Locking bandwidth and relaxation oscillations of an injection-locked semiconductor laser," IEEE J. Quantum Electron., vol. 24, no. 2, pp. 148-154, Feb. 1988.
22. J.-M. Luo and M. Osinski, "Multimode small-signal analysis of side-mode injection-locked semiconductor lasers," Jpn. J. Appl. Phys., vol. 31, pp. L685-L688, Jun. 1992.
23. Y. Hong and K. A. Shore, "Locking characteristics of a side-mode injected semiconductor laser," IEEE J. Quantum Electron., vol. 35, no. 11, pp. 1713-1717, Nov. 1999.
24. T. Fishman and A. Hardy, "Effect of spatial hole burning on injection-locked vertical-cavity surface-emitting laser arrays," Appl. Opt., vol. 39, no. 18, pp. 3108-3114, 2000.
25. J. Horer and E. Patzak, "Large-signal analysis of all-optical wavelength conversion using two-mode injection-locking in semiconductor lasers," IEEE J. Quantum Electron., vol. 33, no. 4, pp. 596-608, Apr. 1997.
26. Z. G. Pan, S. Jiang, M. Dagenais, R. A. Morgan, K. Kojima, M. T. Asom, R. E. Leibenguth, G. D. Guth, and M. W. Focht, "Optical injection induced polarization bistability in vertical-cavity surface-emitting lasers," Appl. Phys. Lett., vol. 63, pp. 2999-3001, Nov. 1993.
27. S. Bandyopadhyay, Y. Hong, P. S. Spencer, and K. A. Shore, "VCSEL polarization control by optical injection," J. Lightw. Technol., vol. 21, no. 10, pp. 2395-2404, Oct. 2003.
28. Y. Onishi and F. Koyama, "All-optical regeneration, using a vertical-cavity surface-emitting laser with external light injection," IEICE Trans. Electron. (Japan), vol. E87-C, no. 3, pp. 409-415, Mar. 2004.
29. A. Homayounfar and M. Adams, "Polarisation effects in optically-injected VCSELs," Inst. Electr. Eng. Electron. Lett., vol. 42, no. 9, pp. 537-538, Apr. 2006.
30. L. Chrostowski, "Optical injection locking of vertical cavity surface emitting lasers," Ph.D. dissertation, Univ. California, Berkeley, 2004.
31. H. Halbritter, R. Shau, F. Riemenschneider, B. Kogel, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, M.-C. Amann, and P. Meissner, "Chirp and linewidth enhancement factor of 1.55 μm VCSEL with buried tunnel junction," Inst.Electr.Eng.Electron.Lett., vol.40, no.20, pp. 1266-1268, Sep. 2004.
32. M. Ortsiefer, M. Grau, J. Rosskopf, R. Shau, K. Windhom, E. Rönneberg, G. Bohm, W. Hofmann, O. Dier, and M.-C. Amann, "InP-based VCSELs with buried tunnel junction for optical communication and sensing in the 1.3-2.3 μm wavelength range," in Proc. IEEE Int. Semicond. Laser Conf., 2006, p. WB7.