Narrowing of ground energy level distribution in an array of InAs/AlAs QDs by post grown annealing

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 11, 2006, Pages 3932-3934

  Shamirzaev, T S ^a   Kalagin, A K ^a   Toropov, A I ^a   Gutakovskii, A K ^a   Zhuravlev, K S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BLUE SHIFTING; ENERGY LEVELS; GROUND ENERGY; INTER-DIFFUSION; INTERNATIONAL CONFERENCES; PL BANDS; PL SPECTRUM; POST-GROWTH ANNEALING; QD SIZE; QUANTUM DOTS; QUANTUM WELLS; TRANSMISSION ELECTRON;

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; LIGHT EMISSION; LUMINESCENCE; OPTICAL WAVEGUIDES; PLASMA DIAGNOSTICS; QUANTUM ELECTRONICS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 35348919150     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200671544     Document Type: Conference Paper

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