Investigation of apertureless NSOM for measurement of stress in strained silicon-on-insulator test structures

AIP Conference Proceedings

Volumn 931, Issue , 2007, Pages 94-98

  McDonough, Colin ^a   Atesang, Jacob ^a   Wang, Yunfei ^a   Geer, Robert E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Raman scattering; Strained silicon; Tip enhancement

Indexed keywords

EID: 35348844580     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2799444     Document Type: Conference Paper

References (12)

1. L. Novotny, E. J. Sanchez, and X. S. Xie, Phys. Rev. Lett, 82, 4014 (1999).
2. A. Hartschuh, E. Z. Sanchez, X. S. Xie, and L. Novotny, Phys. Rev. Lett., 90, 9 (2003).
3. H. Watanabe, Y. Ishida, N. Hayazawa, Y. Inouye, and S, Kawata, Phys. Rev. B, 69, 155418 (2004).
4. W. X. Sun, Z. X. Shen, Ultramicroscopy, 94, 237 (2003).
5. Jacob Atesang, Robert Geer Proceedings of SPIE, Robert E. Geer, Norbert Meyendorf, George Y. Baaklini, Bernd Michel, Editors, Vol. 5766, 134, SPIE Press, Bellingham, WA (2005).
6. K. Rim, Solid State Electronics, 43, 1133 (2003).
7. R. Matyi, unpublished.
8. I. De Wolf, Semicond. Sci. Technol. 11, 139 (1996).
9. I. De Wolf, H. E. Maes, and S. K. Jones, J. Appl. Phys. 79, 7148 (1996).
10. E. Anastassakis, A. Cantarero, and M. Cardona, Phys. Rev. B 41, 7529 (1990).
11. A. Sokolov, unpublished.
12. Ran Liu and Michael Canónica, Microelectronic Engineering: Proceedings of Symposium on Characterization and Mechanical Reliability of Advanced Electronic Materials at the Nanoscale 75, 243 (2004).