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Volumn 34, Issue 8, 1986, Pages 5621-5634

Theoretical calculations of heterojunction discontinuities in the Si/Ge system

Author keywords

[No Author keywords available]

Indexed keywords


EID: 35248858533     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.34.5621     Document Type: Article
Times cited : (1270)

References (65)
  • 16
    • 84926268553 scopus 로고    scopus 로고
    • R. M. Martin, in Festkörperprobleme (Advances in Solid State Physics), edited by P. Grosse (Vieweg, Braunschweig, 1985), Vol. XXV, pp. 3–17.
  • 43
    • 84926268479 scopus 로고    scopus 로고
    • An increase in cutoff from 12 to 18 Ry affects the conduction-band energy of the GAMMA state significantly, and has a small effect upon L. Other energies are essentially converged with the 12-Ry cutoff.
  • 45
    • 84926263818 scopus 로고    scopus 로고
    • In cases where the ``unrepresentative'' bands, such as the conduction band at GAMMA, would constitute the lowest energy gap, they should be placed relative to the representative ones.
  • 47
    • 84926263541 scopus 로고    scopus 로고
    • M. Cardona, G. Harbecke, O. Madelung, and U. Rössler, Physics of Group IV Elements and III-V Compounds, Vol. 17a of Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung (Springer, New York, 1982), Group III.
  • 60
    • 84926269463 scopus 로고    scopus 로고
    • we have shifted them upward by approximately 0.1 eV, which should bring them close to the T=0 K values.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.