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Volumn 492-493, Issue , 2005, Pages 255-260
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The use of functionally graded poly-SiGe layers for MEMS applications
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Author keywords
Functionally graded materials; MEMS; Poly SiGe
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CMOS INTEGRATED CIRCUITS;
FUNCTIONALLY GRADED MATERIALS;
GYROSCOPES;
MEMS;
STRESSES;
HIGH QUALITY FILMS;
OPTIMAL THICKNESS;
SINGLE LAYER PROCESSES;
STRESS COMPENSATION LAYERS;
STRESS GRADIENTS;
STRUCTURAL LAYERS;
POLYSILICON;
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EID: 35148893031
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-970-9.255 Document Type: Conference Paper |
Times cited : (344)
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References (29)
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