A modified pseudoMOS technique to characterize interface quality of SOI wafers

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2685-2689

  Höllt, Lothar ^a   Born, Matthias ^a   Schlosser, Martin ^a   Eisele, Ignaz ^a   Grabmeier, Josef ^b   Huber, Andreas ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Characterization; PseudoMOSFET ( MOSFET); Schottky contacts; SOI

Indexed keywords

ELECTRIC CONTACTS; ELECTRON MOBILITY; METALLIZING; MOSFET DEVICES; SILICON WAFERS;

GEOMETRICAL EDGE EFFECTS; PSEUDOMOSFET TECHNIQUE; SCHOTTKY CONTACTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 35148881522     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904013     Document Type: Article

References (7)

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