High-index fluoride materials for 193 nm immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 2, 2007, Pages

  Nawata, Teruhiko ^a   Inui, Yoji ^a   Masada, Isao ^a   Nishijima, Eiichi ^a   Mabuchi, Toshiro ^a   Mochizuki, Naoto ^a   Satoh, Hiroki ^b   Fukuda, Tsuguo ^b  

^a TOKUYAMA CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

BaLiF3; Czochralski; High index; Immersion lithography; Single crystal

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; FLUORINE COMPOUNDS; OPTIMIZATION; SCATTERING; SINGLE CRYSTALS; TRANSPARENCY;

FLUORIDE MATERIALS; HIGH INDEX; IMMERSION LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 35148837184     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711045     Document Type: Conference Paper

References (6)

1. JSR Corporation "JSR Proves Second Generation Immersion Lithography to Knock-out F2 Possibility", Company News, 29th November, 2004
2. J. H. Burnett et al "High-index materials for 193-nm and 157-nm immersion lithography", SPIE OPTICAL MICROLITHOGRAPHY XVIII, San Jose, USA. 27-4th March, 2005
3. H. Sato, T. Nawata et al, Proc. of SPIE, No.6154, 61541A-1 (2006).
4. A. Yoshikawa, K. Kamada et al., J. Crystal Growth 285(2005)445
5. T. Nawata et al "State of the art CaF2 crystals grown by the CZ method.", Intl Symposium on Immersion & 157nm Lithography, Vancouver. 5th August, 2004
6. A.I.Agulyanski et al.,Russ. J. Inorg. Chem. 27[4](1982)579