Studies on electron penetration versus beam acceleration voltage in energy-dispersive X-ray microanalysis

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2006, Pages 610-613

  Sharon, Lee ^b   Hua, Younan ^b   Zhao, Siping ^a,b   Mo, Zhiqiang ^b  

^a IEEE

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; ENERGY DISPERSIVE X RAY ANALYSIS; MONTE CARLO METHODS; WSI CIRCUITS;

ACCELERATING BEAM VOLTAGE; ELECTRON PENETRATION DEPTH; WAFER FABRICATION;

FAILURE ANALYSIS;

EID: 35148831277     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2006.380704     Document Type: Conference Paper

References (6)

1. Hua Younan, Z. R Guo & K. W. Chau, "Studies of ZAF Standardless EDX Quantification Method And Application in Failure Analysis of Semiconductor". Ournal of Trace and Microprobe Techniques, 15 (1), 13-31 (1997).
2. Hua Younan, Studies of EDX ZAF Quantification Method and Characterization of EDX Function in LEO 982 FESEM Equipment. The Proceedings from the SEMICON, Singapore, Testing, Assembly and Packaging 99-Technical Program, 3-6 May, SICEC, Singapore, 207-212 (1999).
3. th Meeting of The Electrochemical Society Phoenix, Arizone, October 22-27, No. 810 (2000).
4. th International Symposium for Testing & Failure Analysis (ISTFA'2002), 3-7 Nov, Phoenix Civic Plaza, Phoenix, Arizona, USA p495-504 (2002).
5. 2 and TiW) in Wafer Fabrication Using Energy-Dispersive X-Ray Microanalysis Technique". Journal of Trace and Microprobe Techniques, Vol. 21, No. 2, p25-34 (2003).
6. Hua Younan, Studies on An Estimating Method for Electron Beam Acceleration Voltage Used in Energy-Dispersive X-Ray Microanalysis Technique and Its Application in Failure Analysis of Wafer Fabrication. Journal of Instrumentation Science and Technology (IS & T), Vol. 32, No.2, pp. 115-126 (2004).