BEOL integration of highly damage -resistant porous ultra low-k material using direct CMP and via-first process

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 21-23

  Iijima, T ^a   Lin, Q ^b   Chen, S ^c   Labelled, C ^d   Fuller, N ^b   Ponoth, S ^c   Cohen, S ^b   Lloyd, J ^b   Dunn, D ^c   Muzzy, C ^b   Gill, J ^c   Nitta, S ^b   McGahay, V ^c   Tyberg, C ^b   Spooner, T ^c   Nye, H ^c  

^a Toshiba America Inc   (United States)

^b IBM RESEARCH   (United States)

^c IBM   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); COPPER; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NANOTECHNOLOGY; OPTICAL DESIGN; OPTICAL INTERCONNECTS; TECHNOLOGY;

BEOL INTEGRATION; CAPACITANCE VALUES; CARBON CONCENTRATIONS; CMP PROCESSES; CU INTERCONNECTS; ELECTRICAL PROPERTIES; INTEGRATED STRUCTURES; INTEGRATION SCHEMES; INTERCONNECT STRUCTURES; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; MATERIAL DAMAGES; MOISTURE UPTAKE; NOVEL MATERIALS; POROUS ULK; POROUS ULTRA LOW-K; VIA-FIRST;

DIELECTRIC MATERIALS;

EID: 35048845912     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648634     Document Type: Conference Paper

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