Expanded thermal model for IGBT modules

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2006, Pages 777-784

  Lu, B ^a   Hudgins, J L ^a   Bryant, A T ^b   Santi, E ^c   Palmer, P R ^d  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c University of South Carolina

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Finite difference method; Fourier series; IGBT; Modules; Packaging; Power cycles; Thermal models

Indexed keywords

ELECTRONICS PACKAGING; FINITE DIFFERENCE METHOD; FOURIER SERIES; HEAT LOSSES; MATHEMATICAL MODELS; TEMPERATURE DISTRIBUTION; THERMOELECTRICITY;

POWER CYCLES; THERMAL MODELS; TRANSIENT THERMAL RESPONSE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34948884548     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2006.256614     Document Type: Conference Paper

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