Specific features of intensification of silicon etching in CF 4/O2 plasma

Russian Microelectronics

Volumn 36, Issue 5, 2007, Pages 321-332

  Grigoryev, Yu N ^a   Gorobchuk, A G ^a  

^a INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMISORPTION; ETCHING; MATHEMATICAL MODELS; SILICON WAFERS;

INTENSIFICATION; OXYGEN CONCENTRATION; SPONTANEOUS ETCHING RATE;

PLASMAS;

EID: 34848849575     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106373970705006X     Document Type: Article

References (12)

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10. Russian Translation Molekularnaya teoriya gazov i zhidkostei, Moscow: Inostrannaya Literatura, 1961.
11. Flamm, D.L., Donnely, V.M., and Mucha, J.A., The Reaction of Fluorine Atoms with Silicon, J. Appl. Phys., 1981, vol. 52, no. 5, pp. 3633-3639.
12. Ferziger, J.H. and Kaper, H.G., Mathematic Theory of Transport Processes in Gases, Amsterdam-London: North-Holland, 1972. Russian Translation Matematicheskaya teoriya protsessov perenosa v gazakh, Moscow: Mir, 1976.