Self-formed barrier technology using CuMn alloy seed for copper dual-damascene interconnect with porous-SiOC/ porous-PAr hybrid dielectric

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 7-9

  Watanabe, T ^a   Nasu, H ^a   Usui, T ^a   Minamihaba, G ^a   Kurashima, N ^a   Gawase, A ^a   Shimada, M ^a   Yoshimizu, Y ^a   Uozumi, Y ^a   Shibata, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER ALLOYS; DIELECTRIC DEVICES; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; SILICON COMPOUNDS;

CU DUAL-DAMASCENE INTERCONNECTS; MOISTURE RESISTANCE PROPERTY; RESISTANCE CHANGE; SELF FORMED BARRIER TECHNOLOGY;

OPTICAL INTERCONNECTS;

EID: 34748916590     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382332     Document Type: Conference Paper

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