Extremely low Keff (∼1.9) Cu interconnects with air gap formed using SiOC

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 141-143

  Harada, T ^a   Ueki, A ^c   Tomita, K ^b   Hashimoto, K ^b   Shibata, J ^a   Okamura, H ^a   Yoshikawa, K ^b   Iseki, T ^a   Higashi, M ^b   Maejima, S ^b   Nomura, K ^a   Goto, K ^b   Shono, T ^b   Muranaka, S ^b   Torazawa, N ^a   Hirao, S ^a   Matsumoto, M ^a   Sasaki, T ^c   Matsumoto, S ^a   Ogawa, S ^a   Fujisawa, M ^b   Ishii, A ^b   Matsuura, M ^b   Ueda, T ^a   more..

^a PANASONIC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Engineering Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER ALLOYS; DIELECTRIC PROPERTIES; ENERGY GAP; LEAKAGE CURRENTS; SILICON CARBIDE; THIN FILMS;

AIR GAP EXCLUSION (AGE); DUAL DAMASCENE; KEFF;

OPTICAL INTERCONNECTS;

EID: 34748901393     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382364     Document Type: Conference Paper

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