High efficiency GaN HEMT power amplifier optimized for OFDM EER transmitter

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1247-1250

  Hong, Sungchul ^a   Woo, Young Yun ^a   Kim, Lidu ^b   Kim, Jangheon ^b   Moon, Junghwan ^b   Kim, Han Seok ^a   Lee, Jong Sung ^a   Kim, Bumman ^b  

^a SAMSUNG Electronics   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; SWITCHING; TRANSMITTERS;

BIAS MODULATION; DRAIN EFFICIENCIES; ENVELOPE ELIMINATION AND RESTORATION (EER);

POWER AMPLIFIERS;

EID: 34748898383     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380394     Document Type: Conference Paper

References (16)

1. F. H. Raab, P. Asbeck, S. Cripps, P. B. Kenington, Z. B. Popovic, N. Pothecary, J. F. Sevic, and N. O. Sokal, "Power amplifiers and transmitters for RF and microwave," IEEE Trans. Microw. Theory Tech., vol. 50, no. 3, pp. 814-826, Mar. 2002.
2. P. B. Kennington, "High Linearity RF Amplifier Design," Norwood, MA: Artech House, 2000.
3. S. C. Cripps, "High-efficiency envelope-tracking W-CDMA base-station amplifier Using GaN HFETs," Norwood, MA: Artech House, 2002.
4. M. C. W. Hoyerby and M. A. E. Andersen, "High bandwidth, high-efficiency envelope tracking power supply for 40W RF power amplifier using paralleled bandpass current sources," in proc. 36th IEEE int. Conf. on PES, Sep. 2005, pp. 2804-2809.
5. D. F. Kimball, J. Jeong, C. Hsia, P. Draxler, S. Lanfranco, W. Nagy, K. Linthicum, L. E. Larson, and P. M. Asbeck, "Advanced techniques in RF power amplifier design," IEEE Trans. Microw. Theory Tech., vol. 54, no. 11, pp. 3848-3856, Nov. 2006.
6. C. Jau Horng, P. Fedorenko, and J. S. Kenney, "A low voltage W-CDMA polar transmitter with digital envelope path gain compensation," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 7, pp. 428-430, Jul. 2006.
7. R. H. Raab, B. E. Sigmon, R. G. Myers, and R. M. Jackson, "L-band transmitter using Kahn EER technique," IEEE Trans. Microw. Theory Tech., vol. 46, no. 12, pp. 2220-2225, Dec. 1998.
8. N. Wang, X. Peng, V. Youzefzadeh, D. Maksimovic, S. Pajic, and Z. Popovic, "Linearity of X-band class E power amplifiers in EER operation," IEEE Trans. Microw. Theory Tech., vol. 53, no. 3, pp. 1096-1102, Mar. 2005.
9. J. Kim, J. Cha, I. Kim, and B. Kim, "Optimum operation of asymmetrical cells based linear Doherty power amplifiers - uneven power drive and power matching," IEEE Trans. Microw. Theory Tech., vol. 53, no. 5, pp. 1802-1809, May 2005.
10. N. Ui and S. Sano, "A 45% drain efficiency, -50dBc ACLR GaN HEMT class E amplifier with DPD for WCDMA base station," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp. 718-721.
11. Y. Yang, Y. Y. Woo, J. Yi, and B. Kim, "A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design," IEEE Trans. Microw. Theory Tech., vol. 49, no. 9, pp. 1626-1633, Sep. 2001.
12. N. Scheinberg and E. Chisholm, "A capacitance model for GaAs MESFETs," IEEE J. Solid-State Circuits, vol. 26, no. 10, pp. 1467-1470, Oct. 1991.
13. G. Zhang, R.D. Pollard, and CM. Snowden, "Large-signal optically controlled HEMT model and oscillator design," in IEE Proc. Microw. Antennas Propag.,vol. 143, no. 6, Dec. 1996, pp. 487-490.
14. F. H. Raab, "Class-E, class C, and class F power amplifiers based upon a finite number of harmonics," IEEE Trans. Microw. Theory Tech., vol. 49, no. 8, pp. 1462-1468, Aug. 2001.
15. A. Inoue, A. Ohta, S. Goto, T. Ishikawa, and Y. Matsuda, "The efficiency of class-F and inverse class-F amplifiers," in IEEE MTT-S Int. Microw. Symp. Dig., Jun 2004, pp. 1947-1950.
16. Y. Y. Woo, Y. Yang, and Bumman Kim, "Analysis and experiments for high efficiency class-F and inverse class F power amplifiers," IEEE Trans. Microw. Theory Tech., vol. 54, no. 5, pp. 1969-1974, May 2006.