A novel e-mode PHEMT linearized darlington cascode amplifie

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 153-156

  Kobayashi, Kevin W ^a  

^a Sirenza Microdevices   (United States)

Author keywords

Cascode wideband; Darlington; E mode; ED PHEMT; IP3 bandwidth; Self bias

Indexed keywords

AMPLIFIER DESIGNS; APPLIED (CO); BANDWIDTH PERFORMANCE; CASCODE; CASCODE TOPOLOGY; COMPOUND SEMICONDUCTOR (CS); DARLINGTON; DISTRIBUTED TECHNIQUES; HIGH MICROWAVE; SELF BIASING; SEMICONDUCTOR TECHNOLOGIES;

ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS;

INTEGRATED CIRCUITS;

EID: 34748848930     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319934     Document Type: Conference Paper

References (4)

1. Sirenza Microdevices, "Standard 5V Medium Power InGaP Darlington Amplifiers," Microwave Journal, vol. 48, no.5, may 2005, pg. 164.
2. Kobayashi, K.W., "Improved efficiency, IP3-Bandwidth and Robustness of a Microwave Darlington Amplifier using 0.5um ED PHEMT," 2005 IEEE Compound Semiconductor Integrated Circuit Symposium, Palm Springs, California, Oct. 31, Pages: 93-96.
3. Kobayashi, K.W., US Patent No. 6,933,787 "Linearized Darlington," August 23, 2005, assignee Sirenza Microdevices.
4. Wohlmuth, W.A.; Liebl, W.; Juneja, V.; Hallgren, R.; Struble, W.; Farias, D.; Litzenberg, P.; Berger, O., "E-/D-pHEMT technology for wirelesss components," IEEE Compound Semiconductor Integrated Circuit Symposium, Monterey, California, Oct. 2004, Pages: 115-118.