Multi-level Cu interconnects integration and characterization with air gap as ultra-low K material formed using a hybrid sacrificial oxide / polymer stack

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 58-60

  Gosset, L G ^a   Gaillard, F ^b   Bouchu, D ^b   Gras, R ^c,d   De Pontcharra, J ^b   Orain, S ^a   Cueto, O ^b   Lyan, Ph ^b   Louveau, O ^c   Passemard, G ^c   Torres, J ^c  

^a NXP SEMICONDUCTORS   (France)

^b CEA GRENOBLE   (France)

^c STMICROELECTRONICS   (France)

^d Laboratoire Interdisciplinaire de Physique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COPPER COMPOUNDS; ELECTRIC PROPERTIES; ENERGY GAP; SILICON CARBIDE;

AIR CAVITIES; INTERCONNECT STACK; MECHANICAL SIMULATIONS; SIGNAL PROPAGATION;

OPTICAL INTERCONNECTS;

EID: 34748843551     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382348     Document Type: Conference Paper

References (8)

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7. F. Charlet et al., Proceedings of SISPAD 2000, p. 87-89
8. S. Orain et al., Microelectronic Reliability, in press (2007)