Statistics of avalanche current buildup time in single-photon avalanche diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 4, 2007, Pages 906-910

  Tan, C H ^a,b   Ng, J S ^a,b   Rees, G J ^b   David, J P R ^a,b  

^a IEEE

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche breakdown; Impact ionization; Jitter; Single photon avalanche diodes (SPADs)

Indexed keywords

IMPACT IONIZATION; INDIUM PHOSPHIDE; JITTER; MATHEMATICAL MODELS; SILICON;

AVALANCHE BREAKDOWN; BREAKDOWN PROBABILITY; RANDOM IONIZATION PATH; SINGLE-PHOTON AVALANCHE DIODES (SPAD);

AVALANCHE DIODES;

EID: 34648857543     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.903843     Document Type: Article

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