Reentrant quantum hall effect and anisotropic transport in a bilayer system at high filling factors

Physical Review Letters

Volumn 99, Issue 12, 2007, Pages

  Gusev, G M ^a   Bakarov, A K ^a   Lamas, T E ^a   Portal, J C ^b,c,d  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c INSA   (France)

^d INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; HALL EFFECT; MAGNETIC FIELD EFFECTS; QUANTUM THEORY;

BILAYER SYSTEMS; QUANTUM HALL EFFECTS; TUNNELING AMPLITUDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34648817248     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.99.126804     Document Type: Article

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