The effect of crystallographic orientation and solution aging on the electrical properties of sol-gel derived Pb(Zr0.45Ti0.55)O3 thin films

Ceramics International

Volumn 33, Issue 8, 2007, Pages 1455-1462

  Alkoy, Ebru Mensur ^a,b   Alkoy, Sedat ^a,c   Shiosaki, Tadashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KOCAELI UNIVERSITY   (Turkey)

^c GEBZE TECHNICAL UNIVERSITY   (Turkey)

Author keywords

A. Sol gel processes; C. Ferroelectric properties; D. PZT; Thin films

Indexed keywords

GRAIN SIZE AND SHAPE; HYSTERESIS; POLARIZATION; SOL-GEL PROCESS; THERMAL EFFECTS; THIN FILMS;

FERROELECTRIC PROPERTIES; FILM ORIENTATION; LEAD ZIRCONATE;

CRYSTALLOGRAPHY;

EID: 34548862308     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2006.06.010     Document Type: Article

References (18)

1. Aoki K., Fukuda Y., Numata K., and Nishimura A. Dielectric properties of (1 1 1) and (1 0 0) lead-zirconate-titanate films prepared by sol-gel technique. Jpn. J. Appl. Phys. 33 9B (1994) 5155-5158
2. Le Rhun G., Poullain G., Bouregba R., and Leclerc G. Fatigue properties of oriented PZT ferroelectric thin films. J. Eur. Ceram. Soc. 25 (2005) 2281-2284
3. 3 thick films grown on Si substrates by metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 43 9B (2004) 6567-6570
4. 3 thin films. J. Appl. Phys. 96 1 (2004) 590-595
5. 3 thin film capacitors. Jpn. J. Appl. Phys. 41 11B (2002) 1312-1314
6. 3 thin films. Integr. Ferroelec. 52 (2003) 127-136
7. Zhang B.P., Iijima T., He G., and Sanada N. Preparation and ferroelectric properties of PZT thin films using a chemical solution deposition process. J. Ceram. Soc. Jpn. 109 4 (2001) 299-304
8. Huang Z., Zhang Q., and Whatmore R.W. Structural development in the early stages of annealing of sol-gel prepared lead zirconate titanate films. J. Appl. Phys. 86 3 (1999) 1662-1669
9. Chen S.Y. Texture evolution and electrical properties of oriented PZT thin films. Mater. Chem. Phys. 45 2 (1996) 159-162
10. 3 thin films: PbO seeding role in the formation of preferential orientation. Acta Mater. 52 (2004) 2787-2793
11. 3 buffer layer. Jpn. J. Appl. Phys. 33 9B (1994) 5167-5171
12. 2 seeding. J. Appl. Phys. 83 7 (1998) 3835-3841
13. Aoki K., Fukuda Y., Numata K., and Nishimura A. Ferroelectric properties of crystalline-oriented lead zirconate titanates formed by sol-gel deposition technique. Jpn. J. Appl. Phys. 34 2B (1995) 746-751
14. Tani T., Li J.F., Viehland D., and Payne D.A. Antiferroelectric-ferroelectric switching and induced strains for sol-gel derived lead zirconate thin layers. J. Appl. Phys. 75 6 (1994) 3017-3023
15. Cao W., and Randall C.A. Grain size and domain size relations in bulk ceramic ferroelectric materials. J. Phys. Chem. Solids 57 10 (1996) 1499-1505
16. Damjanovic D. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics. Rep. Prog. Phys. 61 (1998) 1267-1324
17. Zhang Q., Huang Z., and Whatmore R.W. Studies of lead zirconate titanate sol ageing. Part I: factors affecting particle growth. J. Sol-Gel Sci. Tech. 23 (2002) 135-144
18. Kushida K., Udayakumar K.R., Krupanidhi S.B., and Eric Cross L. Origin of orientation in sol-gel-derived lead titanate films. J. Am. Ceram. Soc. 76 5 (1993) 1345-1348