Low temperature RTP for BCB curing

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2646-2652

  Ouaknine, Michel ^a   Malik, Igor J ^a   Odera, Masato ^a   Ishigaki, Toshikazu ^a   Ueda, Takeshi ^a   Fukada, Takashi ^a   Yoo, Woo Sik ^a   Soussan, Philippe ^b   Muller, Philippe ^b  

^a WaferMasters Inc   (United States)

^b IMEC   (Belgium)

Author keywords

BCB curing; BPSG; Hot wall chamber; Isothermal cavity; Low temperature thermal processing; RTP, rapid thermal processing; SOD anneal

Indexed keywords

ANNEALING; LIGHT TRANSMISSION; OXIDATION; PYROMETRY;

BORON-PHOSPHOSILICATE GLASS (BPSG); HOT WALL APPROACH; MICROWAVE APPLICATIONS; SILICON OXIDATION;

RAPID THERMAL PROCESSING;

EID: 34548861761     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.033     Document Type: Article

References (4)

1. B.K. Tsai et al, in: 14th IEEE International Conference on Advance Thermal Process of Semiconductors, RTP'06 (Kyoto, 2006), 299.
2. E. Beyne, R. van Hoof, A. Achem, Multichip Modules, in: Proceedings of the 1995 International Conference, SPIE, vol. 2575.
3. Yoo W.S., Fukada T., Kuribayashi H., Kitayama H., Takahashi N., Enjoji K., and Sunohara K. Jpn. J. Appl. Phys. 39 (2000) 6143-6151
4. www.cyclotene.com.