Performances of GeSnSbTe material for high-speed phase change memory

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Lee, Chain Ming ^a   Chao, Der Sheng ^a   Chen, Yi Chan ^a   Chen, Ming Jung ^a   Yen, Philip H ^a   Chen, Chih Wei ^a   Hsu, Hong Hui ^a   Wang, Wen Han ^a   Chen, Wei Su ^a   Chen, Fred ^a   Hsiao, Tsai Chu ^a   Kao, Ming Jer ^a   Tsai, Ming Jinn ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GERMANIUM COMPOUNDS;

GESNSBTE (GSST); LOWER SET CURRENT; RESISTANCE RATIO;

PHASE CHANGE MEMORY;

EID: 34548851705     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378936     Document Type: Conference Paper

References (5)

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5. S. Furukawa et al., Proceedings of SPIE, 4342 (2002) 154.