Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2007, Pages 14-19

  Shulver, B J R ^a   Bunting, A S ^a   Gundlach, A M ^a   Haworth, L I ^a   Ross, A W S ^a   Smith, S ^a   Snell, A J ^a   Stevenson, J T M ^a   Walton, A J ^a   Allen, R A ^b   Cresswell, M W ^b  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRON TRANSPORT PROPERTIES; METALLIC FILMS; NONDESTRUCTIVE EXAMINATION; OPTICAL INTERCONNECTS; SILICON;

BARRIER METAL FILMS; ELECTRICAL CRITICAL DIMENSIONS (ECD); TEST STRUCTURES;

SHEET RESISTANCE;

EID: 34548821597     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2007.374447     Document Type: Conference Paper

References (14)

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