Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1429-1433

  Inani, Anand ^a   Koldyaev, Victor ^a   Graves, Spencer ^a  

^a PDF SOLUTIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; EMBEDDED SYSTEMS; MATHEMATICAL MODELS; TANTALUM COMPOUNDS;

EMBEDDED DRAM CAPACITORS; TANTALUM PENTOXIDES; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN;

EID: 34548731350     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.053     Document Type: Article

References (7)

1. Atanassova E., et al. Microelectron Reliability (2002)
2. Kimura M. IEEE TED January (1999)
3. Chen F., et al. Microelectron Reliability (2002)
4. Prendergast J.G., et al. QREI (1997)
5. Wayne N. Accelerated testing (1990), Wiley
6. Wu E.Y., et al. IEEE TED December (2002)
7. Degraev R. IEEE TED February (1998)