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Volumn , Issue , 2007, Pages 324-333

Survey on very fast TLP and ultra fast repetitive pulsing for characterization in the CDM-domain

Author keywords

CDM; Charged device model; Electrostatic discharge; ESD; Pulsed characterization; Very fast transmission line pulsing; VF TLP

Indexed keywords

ELECTROSTATIC DISCHARGE; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; TELECOMMUNICATION REPEATERS; VOLTAGE CONTROL;

EID: 34548724490     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369911     Document Type: Conference Paper
Times cited : (11)

References (27)
  • 2
    • 34548747184 scopus 로고    scopus 로고
    • ESDA standard test method for Electrostatic Discharge Sensitivity Testing - Charged Device Model (CDM) ESD STM5.3.1-1999.
    • ESDA standard test method for Electrostatic Discharge Sensitivity Testing - Charged Device Model (CDM) ESD STM5.3.1-1999.
  • 3
    • 0041487530 scopus 로고    scopus 로고
    • Electromagnetic compatibility (EMC)-Part 4-2: Testing and measurement techniques - Electrostatic discharge immunity test
    • IEC 61000-4-2
    • IEC 61000-4-2: Electromagnetic compatibility (EMC)-Part 4-2: Testing and measurement techniques - Electrostatic discharge immunity test.
  • 4
    • 0022212124 scopus 로고
    • Transmission Line Pulsing Techniques for Circuit Modeling of ESD-Phenomena
    • T. J. Maloney, N. Khurana, "Transmission Line Pulsing Techniques for Circuit Modeling of ESD-Phenomena", Proc. of the EOS/ESD-Symposium, 1985, pp.49-54.
    • (1985) Proc. of the EOS/ESD-Symposium , pp. 49-54
    • Maloney, T.J.1    Khurana, N.2
  • 5
    • 0030274001 scopus 로고    scopus 로고
    • Rise time Effects of HBM and Square Pulses on the Failure Threshold of ggNMOS-Transistors
    • ISBN 0-7803-3369-1
    • C. Musshoff, et al., "Rise time Effects of HBM and Square Pulses on the Failure Threshold of ggNMOS-Transistors", Journal of Microelectronics and Reliability, Vol. 36, No. 11/12, pp. 1743-1746, 1996, ISBN 0-7803-3369-1.
    • (1996) Journal of Microelectronics and Reliability , vol.36 , Issue.11-12 , pp. 1743-1746
    • Musshoff, C.1
  • 6
    • 0028733647 scopus 로고
    • ESD protection elements during HBM-ESD-stress tests -further numerical and experimental results
    • C. Russ, H.Gieser, K.Verhaege, "ESD protection elements during HBM-ESD-stress tests -further numerical and experimental results", in Proc of the 16th EOS/ESD Symposium, 1994, pp.96-105.
    • (1994) Proc of the 16th EOS/ESD Symposium , pp. 96-105
    • Russ, C.1    Gieser, H.2    Verhaege, K.3
  • 7
    • 0028735259 scopus 로고
    • Influence of Tester Parasitics On Charged Device Model Failure Thresholds
    • H. Gieser, H.Gieser, P.Egger, "Influence of Tester Parasitics On Charged Device Model Failure Thresholds", in Proc of the EOS/ESD Symposium 1994, p.69-84.
    • (1994) Proc of the EOS/ESD Symposium , pp. 69-84
    • Gieser, H.1    Gieser, H.2    Egger, P.3
  • 8
    • 0032183002 scopus 로고    scopus 로고
    • H. A. Gieser, M. Haunsehild, Very-Fast Transmission Line Pulsing of Integrated Structures and the Charge Device Model, IEEE Trans. Components, Packaging and Manufacturing Technology - Part C, 21, No.4, pp. 278-285, Oct. 1998 and EOS/ESD-Symposium 1996.
    • H. A. Gieser, M. Haunsehild, "Very-Fast Transmission Line Pulsing of Integrated Structures and the Charge Device Model", IEEE Trans. Components, Packaging and Manufacturing Technology - Part C, Vol.21, No.4, pp. 278-285, Oct. 1998 and EOS/ESD-Symposium 1996.
  • 9
    • 34548767383 scopus 로고    scopus 로고
    • H. Gieser, Verfahren und Vorrichtung, zur gepulsten Hochstrombelastung integrierter Schaltungen und Strukturen, Patents: DE 197 39 923 A1, PCT WO 99/13349, US 512,362 B1
    • H. Gieser, "Verfahren und Vorrichtung, zur gepulsten Hochstrombelastung integrierter Schaltungen und Strukturen", Patents: DE 197 39 923 A1, PCT WO 99/13349, US 512,362 B1
  • 10
    • 84945193266 scopus 로고    scopus 로고
    • Capacitively Coupled Transmission Line Pulsing CC-TLP - A Traceable and Reproducible Stress Method in the CDM-Domain
    • H. Wolf, H. Gieser, W.Stadler, W. Wilkening, "Capacitively Coupled Transmission Line Pulsing CC-TLP - A Traceable and Reproducible Stress Method in the CDM-Domain", Proceedings of the EOS/ESD Symposium 2003, pp. 338-345.
    • (2003) Proceedings of the EOS/ESD Symposium , pp. 338-345
    • Wolf, H.1    Gieser, H.2    Stadler, W.3    Wilkening, W.4
  • 11
    • 77950994767 scopus 로고    scopus 로고
    • Comparing Arc-free Capacitive Coupled Transmission Line Pulsing CC-TLP with Standard CDM Testing and CDM Field, Failures
    • H. Gieser, H. Wolf, F. Iberl, "Comparing Arc-free Capacitive Coupled Transmission Line Pulsing CC-TLP with Standard CDM Testing and CDM Field, Failures", Tagungsband 9. ESD-Forum Berlin 2005, pp. 11-17.
    • (2005) Tagungsband 9. ESD-Forum Berlin , pp. 11-17
    • Gieser, H.1    Wolf, H.2    Iberl, F.3
  • 12
    • 0007377636 scopus 로고
    • Zeitaufgelöste Untersuchungen des Snapbackverhaltens eines ESD-Schutztransistors (Time resolved studies of an ESD-protection transistor)
    • VP Verlags GmbH Herrenberg
    • R. Kropf, C. Russ, R. Kolbinger, H. Gieser, S. Irl., " Zeitaufgelöste Untersuchungen des Snapbackverhaltens eines ESD-Schutztransistors (Time resolved studies of an ESD-protection transistor)", Tagungsband 3. ESD-Forum, VP Verlags GmbH Herrenberg, 1993, pp. 19-26.
    • (1993) Tagungsband 3. ESD-Forum , pp. 19-26
    • Kropf, R.1    Russ, C.2    Kolbinger, R.3    Gieser, H.4    Irl, S.5
  • 13
    • 52049113957 scopus 로고    scopus 로고
    • Transient Analysis of ESD Protection Elements by Time Domain Transmission Using Repetitive Pulses
    • H. Wolf, et al., "Transient Analysis of ESD Protection Elements by Time Domain Transmission Using Repetitive Pulses", Proceedings of the EOS/ESD Symposium 2006, pp. 304-310.
    • (2006) Proceedings of the EOS/ESD Symposium , pp. 304-310
    • Wolf, H.1
  • 14
    • 4344662165 scopus 로고    scopus 로고
    • Characterization and Modeling of Transient Device Behavior under CDM ESD Stress
    • J. Willemen, et al., "Characterization and Modeling of Transient Device Behavior under CDM ESD Stress", Proc of the EOS/ESD Symposium 2003, pp. 88-97.
    • (2003) Proc of the EOS/ESD Symposium , pp. 88-97
    • Willemen, J.1
  • 15
    • 34548732151 scopus 로고    scopus 로고
    • Transient Voltage Overshoot in TLP Testing - Real or Artifact?
    • D. Trémouilles, et al., "Transient Voltage Overshoot in TLP Testing - Real or Artifact?", Proc. of the EOS/ESD Symposium 2005, pp. 152-160.
    • (2005) Proc. of the EOS/ESD Symposium , pp. 152-160
    • Trémouilles, D.1
  • 16
    • 0022264916 scopus 로고
    • Modeling the effects of narrow impulsive overstress on capacitive test structures
    • M. Bridgwood, "Modeling the effects of narrow impulsive overstress on capacitive test structures", EOS/ESD Symp. Proc., 1985, pp. 84-91.
    • (1985) EOS/ESD Symp. Proc , pp. 84-91
    • Bridgwood, M.1
  • 18
    • 34548801031 scopus 로고    scopus 로고
    • nd Edition, Chap. 3 by H. Gieser, Wiley, 2006.
    • nd Edition, Chap. 3 by H. Gieser, Wiley, 2006.
  • 19
    • 34548784107 scopus 로고    scopus 로고
    • E. Grund, private, communication
    • E. Grund, private, communication.
  • 20
    • 34548784663 scopus 로고    scopus 로고
    • Deriving the DUT Current and Voltage Waveforms by Merging VF-TLP Incident and Reflected Signals, EOS/ESD/EMI-Workshop, organized by M. Bafleur LAAS, Toulouse, F, 2006 and private communication
    • E. Grund, "Deriving the DUT Current and Voltage Waveforms by Merging VF-TLP Incident and Reflected Signals", EOS/ESD/EMI-Workshop, organized by M. Bafleur LAAS, Toulouse, F, 2006 and private communication.
    • Grund, E.1
  • 21
    • 34548794281 scopus 로고    scopus 로고
    • private communication
    • J. Barth private communication
    • Barth, J.1
  • 22
    • 0034543580 scopus 로고    scopus 로고
    • TLP Measurements for Verification of ESD Protection Device Response
    • H. Hyatt, et al., "TLP Measurements for Verification of ESD Protection Device Response", Proc of the EOS/ESD Symposium 2000, pp. 111-120.
    • (2000) Proc of the EOS/ESD Symposium , pp. 111-120
    • Hyatt, H.1
  • 24
    • 77950787063 scopus 로고    scopus 로고
    • VF-TLP Systems Using TDT and TDRT for Kelvin Wafer Measurements and Package Level Testing
    • E. Grund and R. Gauthier, "VF-TLP Systems Using TDT and TDRT for Kelvin Wafer Measurements and Package Level Testing," Proceedings of EOS/ESD Symposium 2004.
    • (2004) Proceedings of EOS/ESD Symposium
    • Grund, E.1    Gauthier, R.2
  • 25
    • 0034238637 scopus 로고    scopus 로고
    • Analyzing the Switching Behavior of ESD-Protection Transistors by Very Fast Transmission Line Pulsing
    • H. Wolf, H. Gieser, W. Wilkening, "Analyzing the Switching Behavior of ESD-Protection Transistors by Very Fast Transmission Line Pulsing", Journal of Electrostatics, Elsevier, volume 49, no. 3-4, 2000, pp. 111-127.
    • (2000) Journal of Electrostatics, Elsevier , vol.49 , Issue.3-4 , pp. 111-127
    • Wolf, H.1    Gieser, H.2    Wilkening, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.