Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1730-1734

  Benmansour, A ^a   Azzopardi, S ^a   Martin, J C ^a   Woirgard, E ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FAILURE ANALYSIS; HEAT RESISTANCE; PARAMETER ESTIMATION; SHORT CIRCUIT CURRENTS;

FAILURE EVOLUTION; GATE RESISTANCE;

TRANSISTORS;

EID: 34548693886     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.049     Document Type: Article

References (9)

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3. Trivedi M., et al. Investigation of the short-circuit performance of an IGBT. IEEE Trans Electron Dev 45 1 (1998) 313-320
4. Trivedi M., et al. Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress. IEEE Trans Power Electron 14 1 (1999) 108-116
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8. Benmansour A., et al. Failure mechanism of trench IGBT under short-circuit after turn-off. Microelectron Reliab 46 9-11 (2006) 1778-1783
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