Effects of amounts of carbon source and infiltrated Si on the porosity and fracture strength of porous reaction bonded SiC

Journal of the Korean Ceramic Society

Volumn 44, Issue 7, 2007, Pages 381-386

  Yun, Sung Ho ^b   Tan, Phung Nhut ^c   Kim, Young Do ^b   Park, Sang Whan ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Infiltration; Porous RBSC; Si melt; Silicon carbide

Indexed keywords

EID: 34548542656     PISSN: 12297801     EISSN: None     Source Type: Journal    
DOI: 10.4191/KCERS.2007.44.7.381     Document Type: Article

References (12)

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