Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

Journal of Communications Technology and Electronics

Volumn 52, Issue 8, 2007, Pages 898-900

  Normuradov, M T ^a   Tashatov, A K ^a   Rysbaev, A S ^a   Khuzhaniyazov, Zh B ^a   Yuldashev, Yu Yu ^a   Kholikov, Yu D ^a   Nasriddinov, S S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; BORON; ION IMPLANTATION; LOW ENERGY ELECTRON DIFFRACTION; PHOSPHORUS; PHOTOELECTRON SPECTROSCOPY; SILICIDES; SILICON;

ELASTICALLY SCATTERED ELECTRON SPECTROSCOPY; METAL SILICIDES; SECONDARY-EMISSION PROPERTIES; SINGLE-CRYSTAL LAYERS;

ELECTRONIC STRUCTURE;

EID: 34548531227     PISSN: 10642269     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1064226907080104     Document Type: Article

References (8)

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