Effects of single oxygen vacancy on electronic structure and ferromagnetism for V-doped TiO2

Solid State Communications

Volumn 144, Issue 1-2, 2007, Pages 54-57

  He, K H ^a   Zheng, G ^a   Chen, G ^a   Lu T ^a   Wan, M ^a   Ji, G F ^b  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

D. Electronic structure; D. Ferromagnetism; E. Density functional theory (DFT)

Indexed keywords

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; FERROMAGNETISM; MAGNETIC MOMENTS; OXYGEN VACANCIES; VANADIUM;

FIRST PRINCIPLE CALCULATIONS; HALF-METALLIC BEHAVIOR; PSEUDOPOTENTIAL METHOD; SINGLE OXYGEN;

TITANIUM DIOXIDE;

EID: 34548379466     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.07.021     Document Type: Article

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