Defects around self-organized InAs quantum dots measured by slow positron beam

Applied Physics Letters

Volumn 91, Issue 9, 2007, Pages

  Meng, X Q ^a   Chen, Z Q ^d   Jin, P ^b   Wang, Z G ^b   Wei, Long ^c  

^a WUHAN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; POINT DEFECTS; POSITRONS;

POSITRON BEAMS; STRAIN REDUCING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548379067     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2776861     Document Type: Article

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