Nucleation of ZnTe on the as-terminated Si(112) surface

Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 905-909

  Jaime Vasquez, M ^a   Martinka, M ^a   Jacobs, R N ^a   Benson, J D ^a  

^a Night Vision and Electronic Sensors Directorate (NVESD)   (United States)

Author keywords

Ion scattering spectroscopy (ISS); Nucleation; Reflection high energy electron diffraction (RHEED); X ray photoelectron spectroscopy (XPS); ZnTe Si (112)

Indexed keywords

INELASTIC ANALYSIS; ION SCATTERING SPECTROSCOPY (ISS); TOUGAARD METHOD;

EPITAXIAL GROWTH; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ZINC COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE ANALYSIS;

EID: 34548270560     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0128-2     Document Type: Conference Paper

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