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Volumn 42, Issue 4-5, 2007, Pages 701-703

Formation of graded band-gap in CdZnTe by YAG:Nd laser radiation

Author keywords

Cd1 x Znx Te; Graded band gap; Laser; Thermogradient effect

Indexed keywords

ENERGY GAP; LASER RADIATION; NEODYMIUM LASERS; PHOTOLUMINESCENCE SPECTROSCOPY; Q SWITCHED LASERS; THERMAL GRADIENTS;

EID: 34548222681     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radmeas.2007.01.070     Document Type: Article
Times cited : (16)

References (14)
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    • Blums, Y.1    Medvid', A.2
  • 2
    • 0019087836 scopus 로고
    • Type conversion of InSb from p to n by ion bombardment and laser irradiation
    • Fujisawa I. Type conversion of InSb from p to n by ion bombardment and laser irradiation. Jpn. J. Appl. Phys. 19 (1980) 2137-2140
    • (1980) Jpn. J. Appl. Phys. , vol.19 , pp. 2137-2140
    • Fujisawa, I.1
  • 4
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    • Kaupuzs, J., Medvid', A., 1994. Distribution of impurity atoms over a crystal in nonhomogeneous temperature field. Proceedings of SPIE Conference on Microelectronics Manufacturing, vol. 2335-2336, pp. 134-137.
  • 6
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    • p-n junction formation using laser induced donors in Si
    • Mada Y., and Ione N. p-n junction formation using laser induced donors in Si. Appl. Phys. Lett. 48 (1986) 1205-1207
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 1205-1207
    • Mada, Y.1    Ione, N.2
  • 7
    • 0038034709 scopus 로고    scopus 로고
    • Redistribution of point defects in the crystalline lattice of a semiconductor in an inhomogeneous temperature field
    • Medvid' A. Redistribution of point defects in the crystalline lattice of a semiconductor in an inhomogeneous temperature field. Defects Diffusion Forum 210-212 (2002) 89-102
    • (2002) Defects Diffusion Forum , vol.210-212 , pp. 89-102
    • Medvid', A.1
  • 8
    • 0032630853 scopus 로고    scopus 로고
    • The mechanism generation of donor centres in InSb by laser radiation
    • Medvid' A., Fedorenko L., and Snitka V. The mechanism generation of donor centres in InSb by laser radiation. Appl. Surf. Sci. 14 (1999) 280-285
    • (1999) Appl. Surf. Sci. , vol.14 , pp. 280-285
    • Medvid', A.1    Fedorenko, L.2    Snitka, V.3
  • 14
    • 0009103165 scopus 로고
    • Impurity diffusion in semiconductors at laser annealing of semiconductors
    • (in Russian)
    • Voronkov V.P., and Gurchenok G.A. Impurity diffusion in semiconductors at laser annealing of semiconductors. Phys. Technol. Semicond. 24 10 (1990) 1831-1834 (in Russian)
    • (1990) Phys. Technol. Semicond. , vol.24 , Issue.10 , pp. 1831-1834
    • Voronkov, V.P.1    Gurchenok, G.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.