Fluorine doping in dilute magnetic semiconductor Sn 1-x Fe xO 2

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue 11, 2007, Pages 1151-1155

  Thurber, Aaron ^a   Hays, Jason ^a   Reddy, K M ^a   Shutthanandan, V ^b   Punnoose, Alex ^a  

^a BOISE STATE UNIVERSITY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PARTICLE-INDUCED GAMMA RAY EMISSION; PARTICLE-INDUCED X-RAY EMISSION; TRANSITION METAL DOPING;

CARRIER CONCENTRATION; ENERGY GAP; FLUORINE; GAMMA RAYS; SEMICONDUCTOR DOPING; TEMPERATURE; TIN COMPOUNDS; TRANSITION METALS; ULTRAVIOLET SPECTROPHOTOMETERS; X RAY DIFFRACTION ANALYSIS;

MAGNETIC SEMICONDUCTORS;

EID: 34548188541     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9145-4     Document Type: Conference Paper

References (11)

1. G.A. Prinz, Science, 282, 1660 (1998); D.D. Awschalom, J.M. Kikkawa, Phys. Today, 52, 33 (1999)
2. S.A. Chambers, R.F.C. Farrow, MRS Bull. 28, 729 (2003); W. Prellier, A. Fouchet, B. Mercey, J. Phys.: Condens. Matter 15, R1583 (2003); S. Picozzi, Nat. Mater. 3, 349 (2004)
3. A. Punnoose, J. Hays, A. Thurber, M.H. Engelhard, R.K. Kukkadapu, C. Wang, V. Shutthanandan, S. Thevuthasan, Phys. Rev. B 72, 054402 (2005)
4. X. Mathew, J. Hays, C. Mejía-García, G. Contreras-Puente, A. Punnoose, J. Appl. Phys. 99, 08M101 (2006)
5. T. Dietl, H. Ohno, F. Matsukura, Phys. Rev. B 63, 195205 (2001)
6. A.E. Rakhshani, Y. Makdisi, H.A. Ramazaniyan, J. Appl. Phys. 83, 1049 (1998)
7. J. Hays, A. Punnoose, R. Baldner, M.H. Engelhard, J. Peloquin, k. M. Reddy, Phys. Rev. B 72, 075203 (2005)
8. A. Punnoose, J. Hays, J. Appl. Phys. 97, 10D321 (2005)
9. N.H. Duc, T. Goto in Handbook on the Physics and Chemistry of Rare Earths, vol. 26, ed. by K.A. Gschneidner Jr., L. Eyring (Elsevier, 1999) pp. 178
10. T. Goto, K. Fukamichi, H. Yamada, Physica B 300, 167 (2001)
11. E.P. Wohlfarth, P. Rhodes, Philos. Mag. 7, 1817 (1962)