A room-temperature electrical field-controlled magnetic memory cell

Journal of Materials Research

Volumn 22, Issue 8, 2007, Pages 2111-2115

  Cavaco, C ^a   van Kampen, M ^a   Lagae, L ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BIAS VOLTAGE; COERCIVE FORCE; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC INDUCTION; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; PIEZOELECTRICITY; TRANSDUCERS; VOLTAGE CONTROL;

BOTTOM-PINNED SPIN VALVE; INTERDIGITATED TRANSDUCER; MAGNETIC MEMORY CELL;

FERROELECTRIC MATERIALS;

EID: 34548142256     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0274     Document Type: Article

References (11)

1. S.S.P. Parkin, K.P. Roche, M.G. Samant, P.M. Rice, R.B. Beyers, E.J. O'Sullivan, S.L. Brown, J. Bucchigario, D.W. Abraham, M.Y.L. Rooks, P.L. Trouilloud, R.A. Wanner, and W.J. Gallagher: Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random-access memory (invited). J. Appl. Phys. 95, 5828 (1999).
2. M. Kerekes, R.C. Sousa, I.L. Prejbeanu, O. Redon, U. Ebels, C. Baraduc, B. Dieny, J.-P. Nozières, P.P. Freitas, and P. Xavier: Dynamic heating in submicron size magnetic tunnel junctions with exchange biased storage layer. J. Appl. Phys. 97, 10P501 (2005).
3. E.B. Myers, D.C. Ralph, J.A. Katine, R.N. Louie, and R.A. Buhrman: Current-induced switching of domains in magnetic multilayer devices. Science 285, 867 (1999).
4. N.A. Spaldin and M. Fiebig: The renaissance of magnetoelectric multiferroics. Science 309, 391 (2005).
5. W. Eerenstein, N.D. Mathur, and J.F. Scott: Multiferroic and magnetoelectric materials. Nature 442, 759 (2006).
6. K. Adachi, D. Bonnenberg, J.J.M. Franse, R. Gersdorf, K.A. Hempel, K. Kanematsu, S. Misawa, M. Shiga, M.B. Stearns, and H.P.J. Wijn: Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology - New Series: Group 3, Vol. 19, (Springer-Verlag, Berlin, and Heidelberg GmbH & Co. K, 1986), p. 225.
7. D. Wang, C. Nordman, Z. Qian, J.M. Daughton, and J. Myers: Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions. J. Appl. Phys. 97, 10C906 (2005).
8. S.J. Gross, S. Tadigadapa, T.N. Jackson, S. Trolier-McKinstry, and Q.Q. Zhang: Lead-zirconate-titanate-based piezoelectric micromachined switch. Appl. Phys. Lett. 83, 174 (2003).
9. V. Mueller and Q.M. Zhang: Shear response of lead zirconate titanate piezoceramics. J. Appl. Phys. 83, 3754 (1998),
10. 50 interdigitated electrodes. J. Appl. Phys. 101, 054903 (2007).
11. J. Hayakawa, S. Ikeda, Y.M. Lee, F. Matsukura, and H. Ohno: Effect of high annealing temperature on giant tunnel magneto-resistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junction. Appl. Phys. Lett. 89, 232510 (2006).