High average power and short pulse duration continuous wave mode-locked Nd:GdVO4 laser with a semiconductor absorber mirror

Laser Physics

Volumn 17, Issue 8, 2007, Pages 1033-1036

  Peng, J Y ^a,c   Wang, B S ^a,c   Wang, Y G ^b   Miao, J G ^a,c   Hao, E J ^a,c   Tan, H M ^a   Qian, L S ^a   Ma, X Y ^b  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; DOPING (ADDITIVES); LASER MODE LOCKING; LIGHT ABSORPTION; MIRRORS;

SEMICONDUCTOR ABSORBER MIRROR; THERMAL LENS EFFECT;

NEODYMIUM LASERS;

EID: 34548103198     PISSN: 1054660X     EISSN: 15556611     Source Type: Journal    
DOI: 10.1134/S1054660X07080026     Document Type: Article

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